| PART |
Description |
Maker |
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| CMT02N60GN252 CMT02N60XN252 CMT02N6010 CMT02N60GN2 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
Champion Microelectronic Co...
Champion Microelectroni...
|
| MRF1511T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| CMT01N6010 CMT01N60XN251 CMT01N60XN92 CMT01N60GN25 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
Champion Microelectroni...
|
| MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
